SSC53L-M3, ssc54-m3 www.vishay.com vishay general semiconductor revision: 07-jan-15 1 document number: 89499 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high-current density surface mount schottky rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? very low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-214ab (smc) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics package do-214ab (smc) i f(av) 5.0 a v rrm 30 v, 40 v i fsm 175 a v f 0.38 v, 0.42 v t j max. 150 c diode variatio ns single die do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ssc53l ssc54 unit device marking code 53l s54 maximum repetitive peak reverse voltage v rrm 30 40 v maximum rms voltage v rms 21 28 v maximum dc blocking voltage v dc 30 40 v maximum average forward rectified current at t l (fig. 1) i f(av) 5.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 175 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c
SSC53L-M3, ssc54-m3 www.vishay.com vishay general semiconductor revision: 07-jan-15 2 document number: 89499 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) aluminum substrate mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ssc53l ssc54 unit typ. max. typ. max. maximum instantaneous forward voltage (1) 5.0 a t j = 25 c v f 0.42 0.45 0.45 0.49 v t j = 125 c 0.33 0.38 0.36 0.42 maximum reverse current at rated v r (2) t j = 25 c i r -0.7-0.5 ma t j = 125 c 45 65 40 60 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ssc53l ssc54 unit typical thermal resistance (1) r ? ja 60 c/w r ? jl 20 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SSC53L-M3/57t 0.235 57t 850 7" diameter plastic tape and reel SSC53L-M3/9at 0.235 9at 3500 13" diameter plastic tape and reel 0 1 2 3 4 5 6 0 25 50 75 100 125 150 a v erage for w ard c u rrent (a) lead temperat u re (c) ssc53l ssc54 1 10 100 0 50 150 100 200 n u m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
SSC53L-M3, ssc54-m3 www.vishay.com vishay general semiconductor revision: 07-jan-15 3 document number: 89499 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 0.01 0.1 0.2 0.4 0.6 0. 8 0 1 10 100 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) ssc53l ssc54 t j = 150 c t j = 125 c t j = 25 c 020 60 40 100 8 0 0.001 0.1 0.01 10 1 100 1000 instantaneo u s re v erse c u rrent (ma) percent of rated peak re v erse voltage (%) ssc53l ssc54 t j = 150 c t j = 125 c t j = 25 c re v erse voltage (v) 1 10 100 1000 10 000 100 ssc53l ssc54 j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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